J.R. Lloyd, X.-H. Liu, et al.
IRPS 2009
The relationship between interfacial adhesion and electromigration in Cu metallization was discussed. The electromigration drift velocity and lifetime in a conventional electromigration was also derived. The results indicated a linear relationship between the electromigration activation energy and the intrinsic work of adhesion.
J.R. Lloyd, X.-H. Liu, et al.
IRPS 2009
J.R. Lloyd
Microelectronics Reliability
J.R. Lloyd, M. Lane, et al.
Microelectronics Reliability
D. Edelstein, H.S. Rathore, et al.
IRPS 2004