E. Liniger, T.M. Shaw, et al.
Microelectronic Engineering
The relationship between interfacial adhesion and electromigration in Cu metallization was discussed. The electromigration drift velocity and lifetime in a conventional electromigration was also derived. The results indicated a linear relationship between the electromigration activation energy and the intrinsic work of adhesion.
E. Liniger, T.M. Shaw, et al.
Microelectronic Engineering
C.-K. Hu, L. Gignac, et al.
Journal of Applied Physics
I.C. Noyan, P.-C. Wang, et al.
Review of Scientific Instruments
D.D. Restaino, Steve Molis, et al.
ADMETA 2007