PublicationSolid State ElectronicsPaperReduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxideSolid State ElectronicsView publicationAbstractNo abstract available.Home↳ PublicationsDate01 Jan 1993PublicationSolid State ElectronicsAuthorsA. AcovicC.C.-H. HsuL.C. HsiaJ.M. AitkenIBM-affiliated at time of publicationTopicsPhysical SciencesShare
