Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide

Michael Ray, Yves C. Martin

Proceedings of SPIE - The International Society for Optical Engineering

P. Alnot, D.J. Auerbach, et al.

Surface Science

Revanth Kodoru, Atanu Saha, et al.

arXiv

R. Ghez, J.S. Lew

Journal of Crystal Growth