Record high RF performance for epitaxial graphene transistors

Abstract

By optimizing of the gate dielectrics and device dimensions, we achieve a record high output current and transconductance of 5 mA/μm and 2 mS/μm in epitaxial graphene FETs. A cut-off frequency of 280 GHz is achieved for a 40-nm graphene FET, the highest so far on any synthesized graphene. Also, highest voltage gain of 10 dB has been achieved, with an f max/f T ratio larger than 1 demonstrated consistently on different devices. For the first time, forward power gain |S 21|>1 delivered into a 50-Ω load is demonstrated. © 2011 IEEE.