Recent advances in MRAM technology

Abstract

MRAM technology offers an attractive combination of performance, density, low power, non-volatility, and write endurance. While first stand-alone MRAM products appear poised for introduction, major technology advances are also being reported. In this review, we discuss our work on a 16Mbit demonstrator chip with a 1.42 μm2 cell in 180 nm technology in the context of recent world wide advances in MRAM technology. These include a cell architecture that resolves the magnetic half select write disturb issue and an advanced tunnel barrier material, MgO, that promises much larger signals for MRAM read operations. ©2005 IEEE.