REAL-TIME STUDY OF PARTICLE-INDUCED DISORDERING OF THE Si(111) - 7 multiplied by 7 SURFACE BY OPTICAL SECOND-HARMONIC GENERATION.

Abstract

Summary form only given. The authors report that the optical probe of second-harmonic generation (SHG) can be used to monitor the change in structure of the silicon (Si) surfaces induced by ion bombardment and the deposition of Si atoms. By relating the surface nonlinear susceptibility to the degree of disordering of the surface, the area of the surface disrupted by each incoming ion or atom was inferred.