D.D. Koleske, S. Gates, et al.
Thin Solid Films
The reactive sticking coefficient, SR, of SiH4 on the Si (111)-(7×7) surface has been studied as a function of hydrogen coverage (ΘH) in the temperature range from 100 to 500 °C. Evidence is seen for two adsorption regimes which are proposed to correspond to minority and majority surface sites. On the minority sites (ΘH=0 to 0.08), SR is approximately 10-5 and essentially no dependence of SR on surface temperature, TS, is found. Reactive sticking becomes a complicated function of TS and ΘH, with SR decreasing, on the majority sites (ΘH≫008). © 1989.
D.D. Koleske, S. Gates, et al.
Thin Solid Films
D. Edelstein, C.R. Davis, et al.
IITC 2004
D.B. Beach, R.T. Collins, et al.
MRS Proceedings 1992
S. Gates, D.D. Koleske, et al.
Applied Physics Letters