Facile abstraction of chemisorbed D on Si(100) by atomic H

Abstract

The abstraction of chemisorbed deuterium (D) on Si(100) by atomic hydrogen (Hat) is studied in real time. The surface H and D coverages are measured by mass analyzing the recoiled H+ and D+ ion signals during the abstraction reaction. We find that Hat efficiently removes adsorbed D on Si(100) with a low activation energy of 0.8±0.6 kcal/mol and a reaction probability that is 0.36 times the Hat adsorption rate on clean Si(100). © 1993 American Institute of Physics.