J.A. Kash, S.S. Jha, et al.
Physical Review Letters
Paper
Raman scattering from H or O terminated porous Si
Abstract
The dependence of the crystalline structure of porous Si on the bonding of surface Si atoms to either H or O has been studied by Raman spectroscopy. H terminated porous Si shows microcrystalline character while O terminated porous Si shows atomic disorder within the Si particles.
Related
J.C. Tsang, J.A. Kash
DRC 1997
T.N. Jackson, M.A. Tischler, et al.
IEEE Electron Device Letters
J.C. Tsang, Ph. Avouris, et al.
Journal of Electron Spectroscopy and Related Phenomena