Racetrack memory cell array with integrated magnetic tunnel junction readout

Abstract

In this paper, we report the first demonstration of CMOS-integrated racetrack memory. The devices measured are complete memory cells integrated into the back end of line of IBM 90 nm CMOS. We show good integration yield across 200 mm wafers. With magnetic field-assist, we demonstrate current-driven read and write operations on cells within a 256-cell CMOS-integrated array. © 2011 IEEE.