1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD
S.J. Koester, B.-U. Klepser, et al.
DRC 1998
Quantum yields for the loss of disilane and the formation of silane in the 193 nm photodissociation of disilane have been measured using time-resolved infrared diode laser absorption spectroscopy under single excimer laser pulse conditions at total pressures of 5 to 10 Torr in helium buffer gas. The total quantum yield for loss of disilane is 0.7±0.1 while the quantum yield for formation of silane is only 0.10±0.03. The results suggest that numerous photodissociation pathways as well as non-photodissociative relaxation pathways exist for disilane excited near its electronic absorption threshold. © 1989.
S.J. Koester, B.-U. Klepser, et al.
DRC 1998
P.M. Mooney, F. Legoues, et al.
Applied Physics Letters
P.M. Mooney, J.L. Jordan-Sweet, et al.
Applied Physics Letters
L.J. Klein, K.A. Slinker, et al.
Applied Physics Letters