Quantitative study on the photoexcitation process of SiF₄ at 49-120 nm

Abstract

The photoabsorption and fluorescence cross sections of SiF4 were measured in the 49-120 nm region using synchrotron radiation as a light source. Absorption bands were tentatively assigned to Rydberg states and their oscillator strengths were determined. The fluorescence was dispersed to identify the emitting species. In the 49-58 nm region, the emitter is attributed to the excited SiF4+ (D̃) ion. In the 92-98 nm region, the fluorescence is likely produced by the excited SiF3* radical. Photodissociation process of SiF4 in the extreme ultraviolet region is discussed. © 1987 American Institute of Physics.