T. Schneider, E. Stoll
Physical Review B
We imaged nanoscale lattice strain in a multilayer semiconductor device prototype with a new X-ray technique, nanofocused Bragg projection ptychography. Applying this technique to the epitaxial stressor layer of a SiGe-on-SOI structure, we measured the internal lattice behavior in a targeted region of a single device and demonstrated that its internal strain profile consisted of two competing lattice distortions. These results provide the strongest nondestructive test to date of continuum modeling predictions of nanoscale strain distributions. © 2012 American Chemical Society.
T. Schneider, E. Stoll
Physical Review B
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009