QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries

Abstract

The quantum device analysis using modal evaluation (QDAME) simulation of 7.5 nm double-gate silicon field effect transistors (FET) with differing access geometries was discussed. QDAME was a new device simulation program which solved self-consistently the poisson and Schrödinger equations in two space dimensions under the approximation of ballistic transport. The cross sections and doping of the devices were studied.