SELF-ALIGNED PROCESSES FOR THE GaAs GATE FET.
H. Baratte, D.C. La Tulipe, et al.
IEDM 1985
We report the first successful incorporation of a pseudomorphic InGaAs base in a ballistic hot-electron device. The device, with a 28-nm-thick In 0.15Ga0.85As base, had a collector-base breakdown voltage of 0.55 V and a maximum current transfer ratio of 0.89 at 4.2 K, considerably higher than the 0.75 in a comparable GaAs-base device. Electron energy spectroscopy measurements revealed that at least 30% of the injected electrons traversed the InGaAs base ballistically, causing a strong modulation in the injected currents into the quantized base. The Γ-L valley separation in the strained In0.15Ga0.85As was estimated to be about 410 meV.
H. Baratte, D.C. La Tulipe, et al.
IEDM 1985
J.I. Lee, B.B. Goldberg, et al.
Solid State Communications
T.P. Smith III, K.Y. Lee, et al.
Physical Review B
J. Bloch, M. Heiblum, et al.
Applied Physics Letters