F.M. D'Heurle, J.M.E. Harper
Thin Solid Films
Tungsten silicide on polycrystalline Si becomes increasingly important as interconnections and gate electrodes for metal-oxide-semiconductor field-effect transistor(MOSFET) integrated circuits. Annealing behaviors of coevaporatd tungsten silicide on P-doped poly-Si are studied by x-ray diffraction, He +-backscattering, transmission electron microscopy (TEM), and secondary ion mass spectroscopy (SIMS). High-temperature annealing of silicides results in crystallization and homogenization of tungsten silicide as well as phosphorus out-diffusion from the poly-Si. Their effect on device fabrication is also discussed.
F.M. D'Heurle, J.M.E. Harper
Thin Solid Films
J. De Sousa Pires, F.M. D'Heurle, et al.
Applied Physics Letters
L. Stolt, O. Thomas, et al.
Journal of Applied Physics
C. Cabral Jr., L. Clevenger, et al.
Applied Physics Letters