D.D. Koleske, S. Gates
The Journal of Chemical Physics
Adsorption of SiClH3 and SiCl2H2 on Si(100) is studied as a function of surface temperature, comparing these precursors for Si atomic layer epitaxy (ALE). At 450-550°C, a substantial surface H coverage (θH) exists during SiClH3 adsorption, and θH exhibits transient behavior. During SiCl2H2 adsorption, θH is much smaller. At 500°C with SiCl2H2, ≅1 monolayer of Cl is formed after ≅4×1019 cm-2 exposure. Dichlorosilane is a suitable precursor for Si ALE, but desorption of HCl is significant at T≳500°C so that SiCl2H2 adsorption is not strictly self-limiting.
D.D. Koleske, S. Gates
The Journal of Chemical Physics
S. Gates
MRS Spring Meeting 1997
D.D. Koleske, S. Gates, et al.
The Journal of Chemical Physics
R.C. Taylor, M.M. Plechaty, et al.
Materials Research Bulletin