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Microelectronic Engineering
Paper

Potential fluctuations due to Pb centres at the Si/SiO2 interface

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Abstract

We show that the potential fluctuation model of Brews applies very accurately to Pb centres at the (111) and (100) interfaces. Vacuum annealed MOS samples were used which contained a particularly 'pure' interface largely dominated by the Pb-like defects. For the (100) interface, Pb0 and Pb1 defects appear to have the same capture cross-section.

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Microelectronic Engineering

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