POLYSILOXANE RESIST AS A PROBE FOR ENERGY DEPOSITED IN ELECTRON BEAM EXPOSED RESISTS.

Abstract

In a previous paper, the use of a polysiloxane resist to determine the electron energy deposited in the top 1200 of a 1. 32 micron thick resist as a function of electron beam accelerating potential was described. In the present paper, this same technique is used to map out the absorbed electron energy in the top 1200 of resist as a function of resist thickness, the thickness of a gold layer on a silicon substrate and electron beam accelerating potential.