Publication
ESSCIRC 2013
Conference paper

Performance impact of through-silicon vias (TSVs) in three-dimensional technology measured by SRAM ring oscillators

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Abstract

A compact SRAM ring oscillator circuit for local, insitu, probing of device performance is described. Applied to three-dimensional integrated circuit technology (3DI), the circuit is used to determine if there is any effect on SRAM performance when the cells are placed in close proximity to through-silicon vias (TSVs). © 2013 IEEE.

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Publication

ESSCIRC 2013

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