PaperElectron spin resonance in amorphous silicon, germanium, and silicon carbideM.H. Brodsky, R.S. TitlePhysical Review Letters
PaperAn epr study of the effect of substrate orientation on vapor-grown GaPR.C. Taylor, R.S. TitleApplied Physics Letters
PaperFormation of amorphous silicon by ion bombardment as a function of ion, temperature, and doseF.F. Morehead, B.L. Crowder, et al.Journal of Applied Physics
