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IEEE International SOI Conference 2006
Conference paper

Optimizing history effects in 65nm PD-SOI CMOS

IEEE International SOI Conference 2006
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Abstract

History effects in 65-nm partially-depleted Silicon-on-Insulator CMOS technology are systematically measured and characterized. The impact of various process adjustments on these effects is analyzed, and an optimization strategy is presented. Hardware data show >9% history effect changes is controllable with no loss of performance (e.g. speed and leakage), offering more flexibility in SOI circuit designs. ©2006 IEEE.

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IEEE International SOI Conference 2006

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