About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEEE Magnetics Letters
Paper
Optimization of tunneling magnetoresistance in perpendicular magnetic tunnel junctions with CO\Pd reference layers
Abstract
We report on the optimization of Co\Pd-multilayer-based reference layers in magnetic tunnel junctions with perpendicular magnetic anisotropy. By inserting a thin Ta-spacer layer between the CoFeB interfacial layer and Co\Pd multilayer, a high tunneling magnetoresistance up to 98.5% can be achieved. Electron energy loss spectroscopy and synchrotron X-ray diffraction studies show that the high magnetoresistance is related primarily to the suppression of Pd diffusion and secondarily to improved CoFeB texture during annealing. © 2010-2012 IEEE.