Benjamin G. Lee, Joris Van Campenhout, et al.
CLEO/QELS 2010
We demonstrate electrooptic modulation at a wavelength of 2165nm, using a free-carrier injection-based silicon Mach-Zehnder modulator. The modulator has a Vπ·L figure of merit of 0.12V·mm, and an extinction ratio of -23dB. Optical modulation experiments are performed at bitrates up to 3Gbps. Our results illustrate that optical modulator design methodologies previously developed for telecom-band devices can be successfully applied to produce high-performance devices for a silicon nanophotonic mid-infrared integrated circuit platform. © 2012 Optical Society of America.
Benjamin G. Lee, Joris Van Campenhout, et al.
CLEO/QELS 2010
Solomon Assefa, Steven Shank, et al.
OECC/PS 2013
Folkert Horst, William M. J. Green, et al.
OECC 2011
Gunther Roelkens, O. Raz, et al.
GFP 2010