A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The valence subband dispersion of GaAs/AlGaAs quantum wells, including warping, is measured with meV accuracy using the radiative recombination of hot electrons at neutral acceptors. The measurements are shown to be in excellent agreement with k · p calculations. Differences in calculated dispersions from using various sets of Luttinger parameters proposed in the literature are discussed. © 1994.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications