Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
The valence subband dispersion of GaAs/AlGaAs quantum wells, including warping, is measured with meV accuracy using the radiative recombination of hot electrons at neutral acceptors. The measurements are shown to be in excellent agreement with k · p calculations. Differences in calculated dispersions from using various sets of Luttinger parameters proposed in the literature are discussed. © 1994.
T.N. Morgan
Semiconductor Science and Technology
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Digital Discovery
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Langmuir