Optical detection of hot-electron spin injection into GaAs from a magnetic tunnel transistor source

Abstract

Injection of spin-polarized hot-electron current from a magnetic tunnel transistors into GaAs was discussed. Polarized light which is emitted from a GaAs/In0.2Ga0.8As multiple quantum well light-emitting diodes was studied. Results showed that polarization has strong dependence on the bias voltage across the diode.