R.M. Shelby, D.A. Waldman, et al.
CLEO 2000
The spin polarization of current injected into GaAs from a CoFe/MgO(100) tunnel injector is inferred from the electroluminescence polarization from GaAs/AlGaAs quantum well detectors. The polarization reaches 57% at 100 K and 47% at 290 K in a 5 T perpendicular magnetic field. Taking into account the field dependence of the luminescence polarization, the spin injection efficiency is at least 52% at 100 K, and 32% at 290 K. We find a nonmonotonic temperature dependence of the polarization which can be attributed to spin relaxation in the quantum well detectors. © 2005 The American Physical Society.
R.M. Shelby, D.A. Waldman, et al.
CLEO 2000
B.L. Schumaker, S.H. Perlmutter, et al.
Physical Review Letters
G. Salis, R. Wang, et al.
Applied Physics Letters
R.M. Macfarlane, R.M. Shelby
Optics Letters