Conference paper
Trench storage capacitors for high density DRAMs
T.V. Rajeevakumar, T. Lii, et al.
IEDM 1991
The analysis of Fowler-Nordheim tunneling data in metal-oxide-silicon structures is reviewed. It is concluded that a parabolic dispersion relation for SiO2 and an electron effective mass of mox = 0.5m provide the best description of the experimental results, this conclusion is consistent with recent band structure calculations for SiO2. Also included is a brief discussion of the transverse momentum conservation issue for tunneling from silicon of 〈100〉, 〈110〉, and 〈111〉 orientation into SiO2.
T.V. Rajeevakumar, T. Lii, et al.
IEDM 1991
Z.A. Weinberg, M.V. Fischetti
Journal of Applied Physics
A. Hartstein, Z.A. Weinberg, et al.
Physical Review B
T.C. Leung, Z.A. Weinberg, et al.
Journal of Applied Physics