ON THE DETERMINATION OF SHARP DOPING PROFILES.

Abstract

With the advent of low temperature growth techniques for semiconductors with simultaneous dopant incorporation such as Molecular Beam Epitaxy, it is possible to obtain doping profiles that are in principle arbitrarily sharp. The measurement of such sharp profiles is essential to characterization of the process as well as to understanding device performance. However, determination of the doping profile is a complex art and usually requires a combination of several techniques. These may be categorized into methods of chemical detection and methods of carrier profiling.