R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
A diffusion constant for electrons in a current-carrying semiconductor can be unambiguously defined in nearly uniform systems. For frequency-dependent density gradients it is {Mathematical expression} where {Mathematical expression} is the velocity correlation function with respect to the steady state in a bias field. This result has been elucidated in the relaxation approximation by different approaches to the diffusion problem. Essential for its derivation is a statistical independence assumption of space and velocities, and in order to get a classical diffusion law of Fick's type certain velocities have to be distributed according to the steady state in a bias field. Diffusion constant and noise temperature are discussed for a few band structures in the relaxation approximation. © 1971 Springer-Verlag.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Ronald Troutman
Synthetic Metals