Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency

Abstract

Magnetic tunnel junctions of different sizes and shapes were fabricated and their switching behavior was studied. The response to the free electrode was determined from measurements of junction resistance using exchange bias to offset the magnetic response of one electrode. Switching threshold curves were measured by sweeping magnetic fields in both easy and hard direction. Single domain like switching was observed in some of the submicron junctions.