Conference paper
Mott transition field effect transistor: Experimental results
A.G. Schrott, J.A. Mishwich, et al.
Materials Research Society Symposium - Proceedings
Magnetic tunnel junctions of different sizes and shapes were fabricated and their switching behavior was studied. The response to the free electrode was determined from measurements of junction resistance using exchange bias to offset the magnetic response of one electrode. Switching threshold curves were measured by sweeping magnetic fields in both easy and hard direction. Single domain like switching was observed in some of the submicron junctions.
A.G. Schrott, J.A. Mishwich, et al.
Materials Research Society Symposium - Proceedings
J.Z. Sun, D.W. Abraham, et al.
Applied Physics Letters
A. Anguelouch, B.D. Schrag, et al.
Applied Physics Letters
B. Petek, P.L. Trouilloud, et al.
IEEE Transactions on Magnetics