J.C. Tsang, M.S. Dresselhaus, et al.
Physical Review B
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
J.C. Tsang, M.S. Dresselhaus, et al.
Physical Review B
R.A. Kiehl, P.E. Batson, et al.
Physical Review B
A. Hartstein, V. Srinivasan, et al.
Journal of Instruction-Level Parallelism
D.J. Dimaria, F.J. Feigl
Physical Review B