Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Silicon surfaces which had been exposed to CF4/40%H2 reactive ion etching have been characterized by x-ray photoelectron emission spectroscopy, He ion channeling, H profiling, and Raman scattering techniques. Plasma exposure of a clean Si surface leads to the deposition of a thin (∼30-50Å thick) C, F containing film. The near-surface region (-30-50A) of the Si substrate is heavily disordered (“amorphized”), as found by ion channeling and Raman scattering. A modified, less damaged Si region extends from about 30-50Å from the surface to a depth in excess of 250Å. This layer contains a high concentration (∼5 atom percent) of H as shown by hydrogen profiling techniques. From the observation of Si-H and Si-H2 vibrational modes by Raman scattering, it has been shown that the H is bonded to the Si lattice. In ion scattering, the extended modified Si layer appears to cause a strongly enhanced background in the energy spectra. Results of Monte Carlo range calculations are reported and compared with the damage depth found experimentally. © 1985, The Electrochemical Society, Inc. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Ronald Troutman
Synthetic Metals
T.N. Morgan
Semiconductor Science and Technology
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry