Growth and scaling of oxide conduction after breakdown
Barry P. Linder, James H. Stathis, et al.
IRPS 2003
A new type of FET has been fabricated in which the gate is in direct contact with the channel; there is no intervening charge separating layer. Instead, the separation of gate and channel carriers is achieved by using the staggered band alignment of InAs/(Al, Ga)Sb such that a p+ (AI, Ga)Sb gate layer is placed in direct contact with the n-type InAs channel. The absence of a gate insulator dielectric represents the ultimate in vertical device scaling. At 77 K the measured devices show both current gain and voltage gain, and a maximum transconductance of 500 mS/mm has been observed. © 1991 IEEE
Barry P. Linder, James H. Stathis, et al.
IRPS 2003
Catherine Dubourdieu, John Bruley, et al.
Nature Nanotechnology
T.P. Smith III, H. Munekata, et al.
Surface Science
R.J. Haug, H. Munekata, et al.
Surface Science