PaperGeneralized scale length for two-dimensional effects in MOSFET'sDavid J. Frank, Yuan Taur, et al.IEEE Electron Device Letters
Conference paperUnderstanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-κ / metal-gate pFETsHiroshi Miki, M. Yamaoka, et al.VLSI Technology 2011
PaperThe quantum metal ferroelectric field-effect transistorDavid J. Frank, Paul M. Solomon, et al.IEEE T-ED
PaperHigh-performance CMOS variability in the 65-nm regime and beyondKerry Bernstein, David J. Frank, et al.IBM J. Res. Dev
