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In the accompanying paper we have given evidence that pulsed laser annealing of Si does not involve normal thermal melting and recrystallization. Here we argue the importance of the electron-hole plasma produced by the laser to the annealing process. © 1979.
R. Tsu, W.E. Howard, et al.
Journal of Non-Crystalline Solids
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Applied Physics Letters
W.K. Chu, F.W. Saris, et al.
Physical Review B
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Physical Review B