PaperElectronic dilation of si during pulsed laser annealingJ.A. Van VechtenJapanese Journal of Applied Physics
PaperVariation of semiconductor band gaps with lattice temperature and with carrier temperature when these are not equalJ.A. Van Vechten, M. WauteletPhysical Review B
PaperEntropy of ionization and temperature variation of ionization levels of defects in semiconductorsJ.A. Van Vechten, C.D. ThurmondPhysical Review B