B.J. Elliott, J.B. Gunn, et al.
Applied Physics Letters
A method is described for finding the local resistivity of a semiconductor crystal by measuring the radio frequency spreading resistance of a small probe placed on a flat surface of the sample. The method is nondestructive and does not require the attachment of electrical contacts. The resistivity measured is that of the material lying within a hemisphere of about 1 mm radius; measurements have been made over the range 0.1-100 Ω cm with good accuracy above 0.5 Ω cm. © 1965 The American Institute of Physics.
B.J. Elliott, J.B. Gunn, et al.
Applied Physics Letters
B.J. Elliott, J.B. Gunn
ISSCC 1966
J.B. Gunn, J.L. Staples
Applied Physics Letters
J.B. Gunn
Physics Letters