Non-thermal effects in laser-enchanced etching of silicon by XeF₂

Abstract

Mass spectrometric studies of the products of the reaction of XeF2 with silicon in the dark and under visible illumination have been carried out. The data show that photo-enchancement of the reaction is substantially different from thermal enchancement. It is proposed that photogenerated charge carries influence strongly both the overall etch rate and the reaction product distribution. © 1983.