Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Quasihydrostatic pressure resistivity experiments on a single crystal of SmS are reported up to 27.5 kbar. At low temperature, a regime change occurs at P ∼ 20 kbar, between a "quasiinsulating" behavior (P < 20 kbar) and a metallic ground state (P 20 kbar). Striking similarities appear with TmSe and TmS cases. © 1981.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids