William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
A new interpretation of a recently observed surface state using angular-resolved photoemission spectroscopy near the top of the valence band on the cleaved (111) face of Si has been provided. We are able to explain satisfactorily the observed anisotropy, dispersion and splitting of this peak by examining the electronic structure of a (2 × 1) reconstructed surface. © 1976.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
T.N. Morgan
Semiconductor Science and Technology