PaperTP-B5 Beam-Induced Switching Phenomena in ZnS:Mn BL Memory DevicesO. Sahni, W.E. Howard, et al.IEEE T-ED
PaperHigh hole mobility in Si/Si1-xGex/Si p-type modulation-doped double heterostructuresP.J. Wang, B.S. Meyerson, et al.Applied Physics Letters
PaperSpectral response of photocurrents in the MOST and the dependence on gate and substrate biasH.C. Card, F. FangJournal of Applied Physics