J. Warnock, J.D. Cressler, et al.
IEDM 1991
Multilevel monolithic inductors implemented in a standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4GHz and above 6 at 900MHz for a 2nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps. © 1995, IEE. All rights reserved.
J. Warnock, J.D. Cressler, et al.
IEDM 1991
J.N. Burghartz, D. Edelstein, et al.
IEDM 1996
D. Singh, Keith A. Jenkins, et al.
IEEE Electron Device Letters
Keith A. Jenkins, A.P. Jose, et al.
ICICDT 2008