Suppression of the SOI floating-body effects by linked-body device structure

Abstract

A novel 'Linked-body' SOI-CMOS device structure is presented. This structure suppresses the unwanted SOI floating-body effects, yet retaining all the speed advantage of SOI devices. It has much better short-channel effect and very low off-state current compared with regular SOI devices for digital applications, and has no 'kink' in the I-V curves for analog applications. Excellent ring oscillator performance, improved breakdown characteristics, and absence of transient drain-current overshoot are demonstrated in linked-body SOI devices.