Christophe Fumeaux, Glenn D. Boreman, et al.
Applied Optics
This work presents a new approach to fabricate buried GaInAs/InP nanostructures in a single growth step by metalorganic vapor-phase epitaxy (MOVPE) on patterned substrates. First, it is demonstrated that GaInAs layers can be buried in situ into InP by selective-area MOVPE. Then, it is shown that in situ-buried GaInAs/InP quantum dot arrays can be fabricated by this latter technique. These quantum dots are found to have a high luminescence efficiency, even at room temperature.
Christophe Fumeaux, Glenn D. Boreman, et al.
Applied Optics
Tomas Tuma, Walter Haeberle, et al.
MECH 2013
Mark A. Lantz, Simeon Furrer, et al.
INTERMAG 2015
Johan B. C. Engelen, Vara Prasad Jonnalagadda, et al.
IEEE Transactions on Magnetics