A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
This work presents a new approach to fabricate buried GaInAs/InP nanostructures in a single growth step by metalorganic vapor-phase epitaxy (MOVPE) on patterned substrates. First, it is demonstrated that GaInAs layers can be buried in situ into InP by selective-area MOVPE. Then, it is shown that in situ-buried GaInAs/InP quantum dot arrays can be fabricated by this latter technique. These quantum dots are found to have a high luminescence efficiency, even at room temperature. © 1991.
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
E. Burstein
Ferroelectrics
R. Ghez, J.S. Lew
Journal of Crystal Growth