Peter J. Price
Surface Science
This work presents a new approach to fabricate buried GaInAs/InP nanostructures in a single growth step by metalorganic vapor-phase epitaxy (MOVPE) on patterned substrates. First, it is demonstrated that GaInAs layers can be buried in situ into InP by selective-area MOVPE. Then, it is shown that in situ-buried GaInAs/InP quantum dot arrays can be fabricated by this latter technique. These quantum dots are found to have a high luminescence efficiency, even at room temperature. © 1991.
Peter J. Price
Surface Science
J. Tersoff
Applied Surface Science
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997