Modeling gate-pitch scaling impact on stress-induced mobility and external resistance for 20nm-node MOSFETs

Abstract

The impact of gate-pitch scaling on device internal and external resistance is examined by advanced process and device modeling including distributed contact resistance model, mechanical stress and Monte Carlo (MC)-based stressdependent mobility model. The contact resistance components and their major parameters in sub-50nm contact regime are analyzed by TCAD and transmission line modeling (TLM). The calibration method for the stress-induced channel mobility and the external resistance is proposed using R on-Lgate measurements of 32nm-node devices with different gatepitches. The significant performance degradation due to simple gate-pitch scaling is predicted for 20nm-node technology with sub-100nm gate-pitch. © 2010 IEEE.