Modeling and analysis of parasitic resistance in double gate FinFETs

Abstract

A comprehensive model is presented to analyze the 3D source-drain resistance of undoped double gated FinFETs. The model incorporates the contribution of the spreading resistance, sheet resistance and the contact resistance. The spreading resistance is modeled using a standard 2D model generalized to 3D. The contact resistance is modeled by generalizing the 1D transmission line model to 2D and 3D with appropriate boundary conditions. The model is compared to S/D resistance determined from 3D device simulations. We show excellent agreement between our model and the simulations. ©2008 IEEE.