A. Krol, C.J. Sher, et al.
Surface Science
The authors discuss temperature-dependent dysprosium (Dy) diffusion and the diffusion-driven Dy-silicate formation process in Dy incorporated HfO 2. The Dy-induced dipoles are closely related to the Dy-silicate formation at the high- k/ SiO2 interfaces since the VFB shift in Dy2 O3 is caused by the dipole and coincides with the Dy-silicate formation. Dipole formation is a thermally activated process, and more dipoles are formed at a higher temperature with a given Dy content. The Dy-silicate related bonding structure at the interface is associated with the strength of the Dy dipole moment and becomes dominant in controlling the VFB / VTH shift during the high temperature annealing in the Dy-Hf-O/ SiO2 gate oxide system. Dy-induced dipole reduces the degradation of the electron mobility. © 2011 American Vacuum Society.
A. Krol, C.J. Sher, et al.
Surface Science
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Lawrence Suchow, Norman R. Stemple
JES
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992