A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Using a simple optical technique, we have measured the change in surface stress of Si(001) during the adsorption of a monolayer of arsenic and during the epitaxial growth of germanium with arsenic as a surfactant. Tensile surface stress increases nearly linearly with arsenic coverage until it attains a value of 1400 ± 100 dyn/cm at a full monolayer. During germanium deposition on an arsenic terminated surface, (compressive) surface stress increases at a rate of -1270 dyn/cm per ML (monolayer) between 3 and 8 or 9 ML, the known critical film thickness for defect formation; the stress per monolayer found above 10 ML is substantially smaller. © 1994.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
T. Schneider, E. Stoll
Physical Review B
A.J. Schell-Sorokin, G.W. Lynch
IEEE T-ED
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990