Low-noise SiGe pMODFETs on sapphire with 116 GHz f_max

Abstract

Several 0.1 μm gate-length pMODFETs were fabricated on high-mobility Si0.2Ge0.8/Si0.7Ge0.3 quantum wells grown on silicon-on-sapphire (SOS) wafers. These devices displayed a power gain cutoff frequency of 116 GHz, and minimum noise figure of 2.5 dB at 20 GHz.